Product Bullets
- Product description:
- MOS chip RS1E320GN is suitable for L3+ hash board MOS chip replacement and repair. After the MOS chip is damaged, there is no voltage or abnormal voltage on the whole board. Usually when 0 ASIC is prompted (the number of chips reported by the fixture test is 0), first check the voltage in the voltage domain, if it is not normal, it is likely to be a MOS failure.
Product Info
Product description:
MOS chip RS1E320GN is suitable for L3+ hash board MOS chip replacement and repair. After the MOS chip is damaged, there is no voltage or abnormal voltage on the whole board. Usually when 0 ASIC is prompted (the number of chips reported by the fixture test is 0), first check the voltage in the voltage domain, if it is not normal, it is likely to be a MOS failure.
Features:
Low resistance;
High power package (HSOP8);
Lead-free, RoHS compliant, halogen free;
100% Rg and UIS tested;
Junction-to-ambient thermal resistance: 41.7 °C/W, thermal
resistance: 3.6 °CW.
Parameters:
RDS (on) (max): 1.9 m
lD: ±32A
Power: 3.0W
Drain-source voltage (VDSS ): 30V
Continuous drain current: T. =25±80A (LD*1) T. =25 ±32A (LD)
Pulsed drain current: ±128A
Gate-source voltage: ±20V
Avalanche energy single pulse: 77.7 mJ
Avalanche current: 32A
Power consumption: 34.6 W (PD*1) 3.0W (PD*4)
Junction temperature: 150
Storage temperature range: -55 to +150°C
Additional Information |
Date First Available |
November 05, 2022 |